DIODES DMN66D0LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN66D0LDW-7

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Specifications

Current - Continuous Drain(Id)115mA
RDS(on)6Ω@5V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)23pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 115mA 250mW Surface Mount SOT-363

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