DIODES DMN65D9L-7

DIODES · FETs & Power MOSFETs · MPN DMN65D9L-7

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Specifications

Gate Charge(Qg)400pC
Drain to Source Voltage60V
Current - Continuous Drain(Id)335mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation270mW
Reverse Transfer Capacitance (Crss@Vds)2.6pF
RDS(on)4.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)41pF

Technical details

N-Channel 60V 335mA 270mW Surface Mount SOT-23

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