DIODES · FETs & Power MOSFETs · MPN DMN65D9L-13
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 400pC@4.5V |
| Current - Continuous Drain(Id) | 335mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 270mW |
| RDS(on) | 4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 41pF |
60V 335mA 2.5V 270mW 4Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS