DIODES DMN65D9L-13

DIODES · FETs & Power MOSFETs · MPN DMN65D9L-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)400pC@4.5V
Current - Continuous Drain(Id)335mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation270mW
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)41pF

Technical details

60V 335mA 2.5V 270mW 4Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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