DIODES DMN65D8LW-7

DIODES · FETs & Power MOSFETs · MPN DMN65D8LW-7

No reviews yet — be the first to review DIODES DMN65D8LW-7.

Specifications

Gate Charge(Qg)870pC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)3.2pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation432mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

N-Channel 60V 300mA 432mW Surface Mount SOT-323

Related FETs & Power MOSFETs