DIODES DMN65D8LV-13

DIODES · FETs & Power MOSFETs · MPN DMN65D8LV-13

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Specifications

Gate Charge(Qg)870pC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)310mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.2Ω@5V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

N-Channel 60V 310mA 370mW Surface Mount SOT-23-3

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