DIODES DMN65D8LT-7

DIODES · FETs & Power MOSFETs · MPN DMN65D8LT-7

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)400pC@10V
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)2.2Ω@5V
Number1 N-channel
Input Capacitance(Ciss)24pF

Technical details

60V 210mA 1.2V 300mW 2.2Ω@5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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