DIODES DMN65D8LT-13

DIODES · FETs & Power MOSFETs · MPN DMN65D8LT-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)400pC@4.5V
Output Capacitance(Coss)2.8pF
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)24pF

Technical details

N-Channel 60V 210mA 300mW Surface Mount SOT-523

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