DIODES DMN65D8LFb-7B

DIODES · FETs & Power MOSFETs · MPN DMN65D8LFb-7B

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Specifications

Gate Charge(Qg)870pC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)4.7pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation840mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)1.9Ω@10V;2.2Ω@5V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 60V 400mA 840mW Surface Mount X1-DFN1006-3

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