DIODES · FETs & Power MOSFETs · MPN DMN65D8LDWQ-13
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| Current - Continuous Drain(Id) | 200mA |
|---|---|
| RDS(on) | 6Ω@10V |
| Pd - Power Dissipation | 400mW |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 22pF |
| Gate Charge(Qg) | 870pC@10V |
| Operating Temperature | -55℃~+150℃ |
200mA 6Ω@10V 400mW 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS