DIODES DMN65D8LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN65D8LDW-7

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Specifications

Current - Continuous Drain(Id)200mA
Pd - Power Dissipation400mW
RDS(on)2Ω@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)870pC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.2pF

Technical details

N-Channel Array 60V 200mA 400mW Surface Mount SOT-363

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