DIODES · FETs & Power MOSFETs · MPN DMN65D7LFR4-7
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| Gate Charge(Qg) | 1.04nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 260mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 41pF |
60V 260mA 2.5V 700mW 5Ω@10V 1 N-channel X2-DFN1010-4 Single FETs, MOSFETs RoHS