DIODES DMN63D8LW-13

DIODES · FETs & Power MOSFETs · MPN DMN63D8LW-13

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Specifications

Gate Charge(Qg)900pC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)3pF
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation420mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)3.8Ω@5V
Number1 N-channel
Input Capacitance(Ciss)23.2pF

Technical details

30V 380mA 420mW Surface Mount SOT-323

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