DIODES DMN63D8LDWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN63D8LDWQ-7

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Specifications

Current - Continuous Drain(Id)260mA
Pd - Power Dissipation400mW
RDS(on)4.5Ω@4V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)870pC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 260mA 400mW Surface Mount SOT-363

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