DIODES DMN63D8LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN63D8LDW-7

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Specifications

Current - Continuous Drain(Id)260mA
Pd - Power Dissipation400mW
RDS(on)4.2Ω@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)870pC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.2pF

Technical details

N-Channel+P-Channel 30V 260mA 400mW Surface Mount SOT-363

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