DIODES DMN63D8LDW-13

DIODES · FETs & Power MOSFETs · MPN DMN63D8LDW-13

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Specifications

Current - Continuous Drain(Id)260mA
RDS(on)2.8Ω@10V
Pd - Power Dissipation300mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)870pC
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 260mA 300mW Surface Mount SOT-363

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