DIODES DMN63D8L-7

DIODES · FETs & Power MOSFETs · MPN DMN63D8L-7

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Specifications

Gate Charge(Qg)900pC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)3pF
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation520mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)4.5Ω@4V
Number1 N-channel
Input Capacitance(Ciss)23.2pF

Technical details

N-Channel 30V 350mA 520mW Surface Mount SOT-23

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