DIODES DMN63D1LT-7

DIODES · FETs & Power MOSFETs · MPN DMN63D1LT-7

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)392pC@4.5V
Output Capacitance(Coss)4.2pF
Current - Continuous Drain(Id)320mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation330mW
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)2Ω@10V;3Ω@5V
Number1 N-channel
Input Capacitance(Ciss)30pF

Technical details

N-Channel 60V 320mA 330mW Surface Mount SOT-523

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