DIODES · FETs & Power MOSFETs · MPN DMN63D1LT-13
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 392nC@4.5V |
| Current - Continuous Drain(Id) | 320mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 260mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 30pF |
60V 320mA 2.5V 260mW 2Ω@10V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS