DIODES DMN63D1LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN63D1LDW-7

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Specifications

Current - Continuous Drain(Id)250mA
Pd - Power Dissipation390mW
RDS(on)3Ω@5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)30pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

250mA 390mW 3Ω@5V 2.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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