DIODES DMN63D1L-13

DIODES · FETs & Power MOSFETs · MPN DMN63D1L-13

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Specifications

Gate Charge(Qg)304pC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF

Technical details

N-Channel 60V 380mA 370mW Surface Mount SOT-23

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