DIODES · FETs & Power MOSFETs · MPN DMN62D4LDW-7
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| Current - Continuous Drain(Id) | 261mA |
|---|---|
| Pd - Power Dissipation | 450mW |
| RDS(on) | 3Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 41pF |
| Gate Charge(Qg) | 1.04nC@10V |
| Operating Temperature | -55℃~+150℃ |
261mA 450mW 3Ω@10V 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS