DIODES DMN62D1LFDQ-7

DIODES · FETs & Power MOSFETs · MPN DMN62D1LFDQ-7

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Specifications

Gate Charge(Qg)550pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)4.6pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)800mΩ@4V;1Ω@2.5V;1.4Ω@1.8V;1.8Ω@1.5V
Number1 N-channel
Input Capacitance(Ciss)36pF
TypeN-Channel

Technical details

N-Channel 60V 400mA 0.5W Surface Mount DFN-3(1.2x1.2)

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