DIODES · FETs & Power MOSFETs · MPN DMN62D0UDWQ-7
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| Current - Continuous Drain(Id) | 350mA |
|---|---|
| RDS(on) | - |
| Pd - Power Dissipation | 410mW |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 32pF |
| Gate Charge(Qg) | 500pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 3.9pF |
350mA 410mW 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS