DIODES DMN62D0UDWQ-13

DIODES · FETs & Power MOSFETs · MPN DMN62D0UDWQ-13

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Specifications

Current - Continuous Drain(Id)350mA
RDS(on)2Ω@4.5V
Pd - Power Dissipation320mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)2.4pF
Number2 N-Channel
Input Capacitance(Ciss)32pF
Gate Charge(Qg)500pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

350mA 2Ω@4.5V 320mW 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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