DIODES DMN61D9UWQ-13

DIODES · FETs & Power MOSFETs · MPN DMN61D9UWQ-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)400pC@4.5V
Output Capacitance(Coss)3.9pF
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation440mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)1.2Ω@5V
Number1 N-channel
Input Capacitance(Ciss)28.5pF

Technical details

N-Channel 60V 340mA 440mW Surface Mount SOT-323

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