DIODES DMN61D9UW-7

DIODES · FETs & Power MOSFETs · MPN DMN61D9UW-7

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Specifications

Gate Charge(Qg)400pC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)3.5Ω@1.8V
Number1 N-channel
Input Capacitance(Ciss)28.5pF
Type-

Technical details

60V 340mA 320mW Surface Mount SOT-323

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