DIODES DMN61D9UDWQ-13

DIODES · FETs & Power MOSFETs · MPN DMN61D9UDWQ-13

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Specifications

Current - Continuous Drain(Id)318mA
Pd - Power Dissipation440mW
RDS(on)3.5Ω@1.8V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)39pF
Gate Charge(Qg)600pC@4.5V
Operating Temperature-
Output Capacitance(Coss)18pF

Technical details

318mA 440mW 3.5Ω@1.8V 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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