DIODES DMN61D8LVTQ-7

DIODES · FETs & Power MOSFETs · MPN DMN61D8LVTQ-7

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Specifications

Current - Continuous Drain(Id)630mA
RDS(on)2.4Ω@3V
Pd - Power Dissipation1.09W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)0.84pF
Number2 N-Channel
Input Capacitance(Ciss)12.9pF
Gate Charge(Qg)740pC
Operating Temperature-55℃~+150℃

Technical details

N-Channel 60V 630mA 1090mW Surface Mount TSOT-26

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