DIODES DMN61D8LVT-7

DIODES · FETs & Power MOSFETs · MPN DMN61D8LVT-7

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Specifications

Current - Continuous Drain(Id)470mA
RDS(on)1.8Ω@5V
Pd - Power Dissipation820mW
Gate Threshold Voltage (Vgs(th))1.3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)0.84pF
Number2 N-Channel
Input Capacitance(Ciss)12.9pF
Gate Charge(Qg)740pC
Operating Temperature-55℃~+150℃

Technical details

60V 820mW Surface Mount TSOT-26

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