DIODES · FETs & Power MOSFETs · MPN DMN61D8LVT-13
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| Current - Continuous Drain(Id) | 630mA |
|---|---|
| RDS(on) | 2.4Ω@3V |
| Pd - Power Dissipation | 1.09W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | - |
| Input Capacitance(Ciss) | 12.9pF |
| Gate Charge(Qg) | 740pC@5V |
| Operating Temperature | -55℃~+150℃ |
630mA 2.4Ω@3V 1.09W 2V TSOT-26 FET, MOSFET Arrays RoHS