DIODES DMN61D8LQ-7

DIODES · FETs & Power MOSFETs · MPN DMN61D8LQ-7

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)740pC
Current - Continuous Drain(Id)470mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation390mW
Reverse Transfer Capacitance (Crss@Vds)0.84pF
RDS(on)1.8Ω@5V
Number1 N-channel
Input Capacitance(Ciss)12.9pF

Technical details

N-Channel 60V 470mA 390mW Surface Mount SOT-23

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