DIODES DMN61D8LQ-13

DIODES · FETs & Power MOSFETs · MPN DMN61D8LQ-13

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Specifications

Gate Charge(Qg)740pC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)470mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation610mW
Reverse Transfer Capacitance (Crss@Vds)0.84pF
RDS(on)2.4Ω@3V
Number1 N-channel
Input Capacitance(Ciss)12.9pF

Technical details

60V 470mA 2V 610mW 2.4Ω@3V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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