DIODES DMN60H080DS-7

DIODES · FETs & Power MOSFETs · MPN DMN60H080DS-7

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)1.7nC@10V
Output Capacitance(Coss)5.2pF
Current - Continuous Drain(Id)80mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)100Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 600V 80mA 1.1W Surface Mount SOT-23

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