DIODES · FETs & Power MOSFETs · MPN DMN60H080DS-13
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 1.7nC@10V |
| Current - Continuous Drain(Id) | 70mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 700mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 67Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 25pF |
N-Channel 600V 70mA 0.7W Surface Mount SOT-23