DIODES DMN6075S-13

DIODES · FETs & Power MOSFETs · MPN DMN6075S-13

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Specifications

Gate Charge(Qg)5.6nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)24.6pF
RDS(on)120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)606pF
TypeN-Channel

Technical details

N-Channel 60V 2.5A 0.8W Surface Mount SOT-23

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