DIODES DMN6070SY-13

DIODES · FETs & Power MOSFETs · MPN DMN6070SY-13

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Specifications

Gate Charge(Qg)12.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)26.5pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)588pF
Type-

Technical details

60V 4.1A 0.9W Surface Mount SOT-89

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