DIODES DMN6070SSDQ-13

DIODES · FETs & Power MOSFETs · MPN DMN6070SSDQ-13

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Specifications

Current - Continuous Drain(Id)2.7A
Pd - Power Dissipation1.5W
RDS(on)100mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Number-
Input Capacitance(Ciss)588pF
Gate Charge(Qg)12.3nC@10V
Operating Temperature-55℃~+150℃

Technical details

2.7A 1.5W 100mΩ@4.5V 3V SO-8 FET, MOSFET Arrays RoHS

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