DIODES DMN6069SFVW-13

DIODES · FETs & Power MOSFETs · MPN DMN6069SFVW-13

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4A;14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)69mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)740pF

Technical details

60V 3V 2.5W 69mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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