DIODES DMN6069SE-13

DIODES · FETs & Power MOSFETs · MPN DMN6069SE-13

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Specifications

Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)69mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)825pF

Technical details

N-Channel 60V 4.3A 2.2W Surface Mount SOT-223

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