DIODES DMN6068SE-13

DIODES · FETs & Power MOSFETs · MPN DMN6068SE-13

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Specifications

Gate Charge(Qg)5.55nC@4.5V;10.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)45.7pF
Current - Continuous Drain(Id)5.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)27.1pF
RDS(on)68mΩ@10V;100mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)502pF
TypeN-Channel

Technical details

N-Channel 60V 5.6A 2W Surface Mount SOT-223

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