DIODES DMN6066SSS-13

DIODES · FETs & Power MOSFETs · MPN DMN6066SSS-13

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Specifications

Gate Charge(Qg)10.3nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)27.1pF
RDS(on)97mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)502pF
TypeN-Channel

Technical details

N-Channel 60V 5A 1.56W Surface Mount SO-8

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