DIODES · FETs & Power MOSFETs · MPN DMN6040SVTQ-13
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| Gate Charge(Qg) | 22.4nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 44mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.287nF |
60V 5A 3V 1.2W 44mΩ@10V 1 N-channel TSOT-26 Single FETs, MOSFETs RoHS