DIODES DMN601WKQ-7

DIODES · FETs & Power MOSFETs · MPN DMN601WKQ-7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)300mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF

Technical details

N-Channel 60V 300mA 200mW Surface Mount SOT-323

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