DIODES DMN601VKQ-7

DIODES · FETs & Power MOSFETs · MPN DMN601VKQ-7

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Specifications

Current - Continuous Drain(Id)305mA
RDS(on)1.3Ω@10V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)25pF

Technical details

N-Channel Array 60V 305mA 250mW Surface Mount SOT-563

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