DIODES DMN601DWKQ-7

DIODES · FETs & Power MOSFETs · MPN DMN601DWKQ-7

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Specifications

Current - Continuous Drain(Id)300mA
RDS(on)3Ω@5V
Pd - Power Dissipation200mW
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)304pC
Operating Temperature-65℃~+150℃

Technical details

N-Channel Array 60V 0.3A 200mW Surface Mount SOT-363

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