DIODES DMN6017SK3-13

DIODES · FETs & Power MOSFETs · MPN DMN6017SK3-13

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Specifications

Gate Charge(Qg)26nC@4.5V;55nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)152pF
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)126pF
RDS(on)18mΩ@10V;20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.711nF

Technical details

MOSFET N-Channel 60V 43A 50W Surface Mount TO-252(DPAK)

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