DIODES · FETs & Power MOSFETs · MPN DMN6013LFGQ-13
No reviews yet — be the first to review DIODES DMN6013LFGQ-13.
| Gate Charge(Qg) | 55.4nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10.3A;45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.577nF |
60V 1V 1W 13mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS