DIODES DMN6013LFG-13

DIODES · FETs & Power MOSFETs · MPN DMN6013LFG-13

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Specifications

Gate Charge(Qg)55.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10.3A;45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1W
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.577nF

Technical details

60V 3V 1W 13mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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