DIODES · FETs & Power MOSFETs · MPN DMN6010SCTB-13
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Current - Continuous Drain(Id) | 128A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5W;312W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.692nF |
60V 128A 4V 10mΩ@10V 1 N-channel TO-263AB(D2PAK) Single FETs, MOSFETs RoHS