DIODES · FETs & Power MOSFETs · MPN DMN55D0UT-7
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| Gate Charge(Qg) | 636pC@8V |
|---|---|
| Drain to Source Voltage | 50V |
| Current - Continuous Drain(Id) | 160mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| RDS(on) | 4Ω@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 25pF |
N-Channel 50V 160mA 200mW Surface Mount SOT-523